JMTK80N06A Specs and Replacement
Type Designator: JMTK80N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 266 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: TO252
JMTK80N06A substitution
JMTK80N06A datasheet
jmtk80n06a.pdf
60V, 80A, 5.4m N-channel Power Trench MOSFET JMTK80N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 5.4 mW Applications Load Switch PWM Application Power Management D G S Sch... See More ⇒
Detailed specifications: JMTK50N03A , JMTK50N06B , JMTK50P02A , JMTK50P03A , JMTK58N06B , JMTK60N04B , JMTK70N07A , JMTK75N02A , IRFB4227 , JMTK90N02A , JMTQ100N03A , JMTQ100N03D , JMTQ100N04A , JMTQ100P03A , JMTQ11DN10A , JMSL0611PU , JMSL0611PUD .
Keywords - JMTK80N06A MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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