All MOSFET. JMTK80N06A Datasheet

 

JMTK80N06A Datasheet and Replacement


   Type Designator: JMTK80N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 266 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: TO252
 

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JMTK80N06A Datasheet (PDF)

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JMTK80N06A

60V, 80A, 5.4m N-channel Power Trench MOSFETJMTK80N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 5.4 mWApplications Load Switch PWM Application Power ManagementDG SSch

Datasheet: JMTK50N03A , JMTK50N06B , JMTK50P02A , JMTK50P03A , JMTK58N06B , JMTK60N04B , JMTK70N07A , JMTK75N02A , AON6414A , JMTK90N02A , JMTQ100N03A , JMTQ100N03D , JMTQ100N04A , JMTQ100P03A , JMTQ11DN10A , , .

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