JMTK80N06A Datasheet. Specs and Replacement

Type Designator: JMTK80N06A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 266 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: TO252

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JMTK80N06A datasheet

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JMTK80N06A

60V, 80A, 5.4m N-channel Power Trench MOSFET JMTK80N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 5.4 mW Applications Load Switch PWM Application Power Management D G S Sch... See More ⇒

Detailed specifications: JMTK50N03A, JMTK50N06B, JMTK50P02A, JMTK50P03A, JMTK58N06B, JMTK60N04B, JMTK70N07A, JMTK75N02A, AON6414A, JMTK90N02A, JMTQ100N03A, JMTQ100N03D, JMTQ100N04A, JMTQ100P03A, JMTQ11DN10A, JMSL0611PU, JMSL0611PUD

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