JMTQ11DN10A Datasheet. Specs and Replacement

Type Designator: JMTQ11DN10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: PDFN3X3-8L

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JMTQ11DN10A datasheet

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JMTQ11DN10A

JMTQ11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V,10A Load Switch R ... See More ⇒

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JMTQ11DN10A

-30V, -12A, 87m P-channel Power Trench MOSFET JMTQ11DP03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.7 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -12 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 62 mW RDS(ON)_Typ(@VGS=-4.5V 87 mW Applications Load Switch ... See More ⇒

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JMTQ11DN10A

JMTQ120C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 11A Battery Protection R ... See More ⇒

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JMTQ11DN10A

JMTQ130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -40V, I = -30A PWM Applications DS D R ... See More ⇒

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Detailed specifications: JMTK70N07A, JMTK75N02A, JMTK80N06A, JMTK90N02A, JMTQ100N03A, JMTQ100N03D, JMTQ100N04A, JMTQ100P03A, AO3400, JMSL0611PU, JMSL0611PUD, JMSL06120UQ, JMSL0612AG, JMSL0612AGQ, JMSL0612AK, JMSL0612AKQ, JMSL0612AU

Keywords - JMTQ11DN10A MOSFET specs

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