All MOSFET. AP8G04S Datasheet

 

AP8G04S Datasheet and Replacement


   Type Designator: AP8G04S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.3(6.3) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2(7) nS
   Cossⓘ - Output Capacitance: 76(160) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026(0.05) Ohm
   Package: SOP8
 

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AP8G04S Datasheet (PDF)

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AP8G04S

AP8G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8.3A DS DR

Datasheet: AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , MMD60R360PRH , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI .

History: AP10G04DF | AP80P01NF

Keywords - AP8G04S MOSFET datasheet

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