AP8G04S Datasheet and Replacement
Type Designator: AP8G04S
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 8.3(6.3) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 5.5(15.8) nC
tr ⓘ - Rise Time: 2.2(7) nS
Cossⓘ - Output Capacitance: 76(160) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026(0.05) Ohm
Package: SOP8
AP8G04S substitution
AP8G04S Datasheet (PDF)
ap8g04s.pdf
AP8G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8.3A DS DR
Datasheet: AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , MMD60R360PRH , , , , , , , , .
Keywords - AP8G04S MOSFET datasheet
AP8G04S cross reference
AP8G04S equivalent finder
AP8G04S lookup
AP8G04S substitution
AP8G04S replacement
LIST
Last Update
MOSFET: AP8G04S | AP85N03NF | AP80N06D | AP70H06NF | AP50P02DF | AP34N20P | AP3400MI | AP15P04S | AP10H03S | AP10H03DF | AP10G04DF | APG12N10D | AP90N06D | AP8P10S | AP80P01NF | AP80N08NF
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet