AP8G04S Datasheet. Specs and Replacement

Type Designator: AP8G04S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.3(6.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2(7) nS

Cossⓘ - Output Capacitance: 76(160) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026(0.05) Ohm

Package: SOP8

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AP8G04S datasheet

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AP8G04S

AP8G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8.3A DS D R ... See More ⇒

 9.1. Size:2181K  cn apm
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AP8G04S

AP8G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP8G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS D R ... See More ⇒

Detailed specifications: AP10H03S, AP15P04S, AP3400MI, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, 8N60, AP10N04S, AP15G04NF, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI

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