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APJ50N65T Specs and Replacement


   Type Designator: APJ50N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO263
 

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APJ50N65T datasheet

 ..1. Size:1809K  cn apm
 apj50n65f apj50n65p apj50n65t ap65r190.pdf pdf_icon

APJ50N65T

APJ50N65FIPIT (AP65R190) 650V N-Channel Enhancement Mode MOSFET Description The APJ50N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 740V... See More ⇒

Detailed specifications: APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , IRF640N , AP65R190 , APN9N50D , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD .

History: 2N65 | WMO25N10T1

Keywords - APJ50N65T MOSFET specs

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