APJ50N65T Datasheet. Specs and Replacement

Type Designator: APJ50N65T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO263

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APJ50N65T datasheet

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 apj50n65f apj50n65p apj50n65t ap65r190.pdf pdf_icon

APJ50N65T

APJ50N65FIPIT (AP65R190) 650V N-Channel Enhancement Mode MOSFET Description The APJ50N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 740V... See More ⇒

Detailed specifications: APG120N04NF, APG60N10S, AP65R650, APJ30N65F, APJ30N65P, APJ30N65T, APJ50N65F, APJ50N65P, IRFP260N, AP65R190, APN9N50D, APJ14N65D, APJ14N65F, APJ14N65P, APJ14N65T, AP01P10I, AP100N03AD

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