APN9N50D PDF and Equivalents Search

 

APN9N50D Specs and Replacement


   Type Designator: APN9N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.84 Ohm
   Package: TO252
 

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APN9N50D datasheet

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APN9N50D

APN9N50D 500V N-Channel Enhancement Mode MOSFET Description The AP9N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener... See More ⇒

Detailed specifications: AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T , AP65R190 , AO3400 , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D , AP100N03P .

Keywords - APN9N50D MOSFET specs

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