APN9N50D Datasheet. Specs and Replacement

Type Designator: APN9N50D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.84 Ohm

Package: TO252

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APN9N50D datasheet

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APN9N50D

APN9N50D 500V N-Channel Enhancement Mode MOSFET Description The AP9N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener... See More ⇒

Detailed specifications: AP65R650, APJ30N65F, APJ30N65P, APJ30N65T, APJ50N65F, APJ50N65P, APJ50N65T, AP65R190, IRF640N, APJ14N65D, APJ14N65F, APJ14N65P, APJ14N65T, AP01P10I, AP100N03AD, AP100N03D, AP100N03P

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