AP190N15T Datasheet. Specs and Replacement

Type Designator: AP190N15T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 412 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263

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AP190N15T datasheet

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AP190N15T

AP190N15PIT 150V N-Channel Enhancement Mode MOSFET Description The AP190N15P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =190A DS D R ... See More ⇒

Detailed specifications: AP160N10T, AP180N03P, AP180N03T, AP180N08P, AP180N08T, AP18N20D, AP18N20Y, AP190N15P, 2SK2842, AP200N12P, AP200N12T, AP20N65F, AP20N65P, AP30N06P, AP30N06T, AP40N20P, AP40N20T

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