All MOSFET. AP190N15T Datasheet

 

AP190N15T Datasheet and Replacement


   Type Designator: AP190N15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 412 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

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AP190N15T Datasheet (PDF)

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AP190N15T

AP190N15PIT 150V N-Channel Enhancement Mode MOSFET Description The AP190N15P/T uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =190A DS DR

Datasheet: AP160N10T , AP180N03P , AP180N03T , AP180N08P , AP180N08T , AP18N20D , AP18N20Y , AP190N15P , IRF730 , AP200N12P , AP200N12T , AP20N65F , AP20N65P , AP30N06P , AP30N06T , AP40N20P , AP40N20T .

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