AP5G03S Specs and Replacement
Type Designator: AP5G03S
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8(7.2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2(10.8) nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.048) Ohm
Package: SOP8
AP5G03S substitution
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AP5G03S datasheet
ap5g03s ap5g03df.pdf
AP5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The AP5G03S/DF uses advanced trench technology to provide excellent R and low gate charge . DS(ON) The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel V = 30V,I =8A DS D R ... See More ⇒
Detailed specifications: AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , AP50P06T , AON6414A , AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P .
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