AP5G03S Datasheet. Specs and Replacement

Type Designator: AP5G03S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8(7.2) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2(10.8) nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.048) Ohm

Package: SOP8

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AP5G03S datasheet

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AP5G03S

AP5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The AP5G03S/DF uses advanced trench technology to provide excellent R and low gate charge . DS(ON) The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel V = 30V,I =8A DS D R ... See More ⇒

Detailed specifications: AP4N65F, AP4N65P, AP50N06BD, AP50N06BY, AP50N06P, AP50N06T, AP50P06P, AP50P06T, 10N60, AP5G03DF, AP5N50F, AP5N50P, AP5N50T, AP60N03F, AP60N03T, AP60N03P, AP70P03P

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