All MOSFET. AP5G03S Datasheet

 

AP5G03S Datasheet and Replacement


   Type Designator: AP5G03S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8(7.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2(10.8) nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.048) Ohm
   Package: SOP8
 

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AP5G03S Datasheet (PDF)

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AP5G03S

AP5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The AP5G03S/DF uses advanced trench technology to provide excellent R and low gate charge . DS(ON)The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel V = 30V,I =8A DS DR

Datasheet: AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , AP50P06T , P55NF06 , AP5G03DF , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P .

History: AP5G03DF | IRLZ44N | AP50P06T | AP5N50F | AP50P06P

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