AP85N08BT Datasheet. Specs and Replacement

Type Designator: AP85N08BT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 354 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO263

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AP85N08BT datasheet

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 ap85n08bp ap85n08bt.pdf pdf_icon

AP85N08BT

AP85N08BPIT 80V N-Channel Enhancement Mode MOSFET Description The AP85N08BP/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =85A DS D R ... See More ⇒

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Detailed specifications: AP80N07T, AP80N10P, AP80N10T, AP80P06P, AP80P06T, AP80P10P, AP80P10T, AP85N08BP, SPP20N60C3, AP90N06P, AP90N06T, AP9N90F, AP9N90P, AP9N90T, AP110N04D, AP120N02D, AP120N03D

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