All MOSFET. AP85N08BT Datasheet

 

AP85N08BT Datasheet and Replacement


   Type Designator: AP85N08BT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 61 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263
 

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AP85N08BT Datasheet (PDF)

 ..1. Size:1817K  cn apm
 ap85n08bp ap85n08bt.pdf pdf_icon

AP85N08BT

AP85N08BPIT 80V N-Channel Enhancement Mode MOSFET Description The AP85N08BP/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =85A DS DR

 8.1. Size:1830K  cn apm
 ap85n04nf.pdf pdf_icon

AP85N08BT

AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS DR

 8.2. Size:2002K  cn apm
 ap85n03nf.pdf pdf_icon

AP85N08BT

AP85N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP85N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =85 A DS DR

Datasheet: AP80N07T , AP80N10P , AP80N10T , AP80P06P , AP80P06T , AP80P10P , AP80P10T , AP85N08BP , AO4407 , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , , , .

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