All MOSFET. AP110N04D Datasheet

 

AP110N04D Datasheet and Replacement


   Type Designator: AP110N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 411 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO252
 

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AP110N04D Datasheet (PDF)

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AP110N04D

AP110N04D 40V N-Channel Enhancement Mode MOSFET Description The AP110N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =110A DS DR

Datasheet: AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , AON7506 , AP120N02D , AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S .

History: AP18N20Y | IPP120N20NFD

Keywords - AP110N04D MOSFET datasheet

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