AP110N04D Specs and Replacement
Type Designator: AP110N04D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 411 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO252
AP110N04D substitution
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AP110N04D datasheet
ap110n04d.pdf
AP110N04D 40V N-Channel Enhancement Mode MOSFET Description The AP110N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =110A DS D R ... See More ⇒
Detailed specifications: AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , AON6380 , AP120N02D , AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S .
History: IRFR1205PBF | AP18N20D | AP120N03NF
Keywords - AP110N04D MOSFET specs
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AP110N04D replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRFR1205PBF | AP18N20D | AP120N03NF
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