AP110N04D Datasheet. Specs and Replacement

Type Designator: AP110N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 411 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO252

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AP110N04D datasheet

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AP110N04D

AP110N04D 40V N-Channel Enhancement Mode MOSFET Description The AP110N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =110A DS D R ... See More ⇒

Detailed specifications: AP80P10T, AP85N08BP, AP85N08BT, AP90N06P, AP90N06T, AP9N90F, AP9N90P, AP9N90T, RFP50N06, AP120N02D, AP120N03D, AP120N03NF, AP120N04D, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S

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