AP110N04D PDF and Equivalents Search

 

AP110N04D Specs and Replacement

Type Designator: AP110N04D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 411 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO252

AP110N04D substitution

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AP110N04D datasheet

 ..1. Size:1311K  cn apm
ap110n04d.pdf pdf_icon

AP110N04D

AP110N04D 40V N-Channel Enhancement Mode MOSFET Description The AP110N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =110A DS D R ... See More ⇒

Detailed specifications: AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , AON6380 , AP120N02D , AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S .

History: IRFR1205PBF | AP18N20D | AP120N03NF

Keywords - AP110N04D MOSFET specs

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