AP320N04TLG5 Datasheet. Specs and Replacement

Type Designator: AP320N04TLG5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 320 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.9 nS

Cossⓘ - Output Capacitance: 1930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TOLLA-8L

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AP320N04TLG5 datasheet

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AP320N04TLG5

AP320N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP320N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =320A DS D R ... See More ⇒

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AP320N04TLG5

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Detailed specifications: AP12N10Y, AP12P04S, AP13P06D, AP13P06Y, AP13P20D, AP30P03DF, AP30P06D, AP30P10P, STF13NM60N, AP3400AI, AP3400BI, AP3400CI, AP3400DI, AP3400MI-L, AP3401AI, AP3401MI, AP3404BI

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