AP320N04TLG5 Specs and Replacement
Type Designator: AP320N04TLG5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.9 nS
Cossⓘ - Output Capacitance: 1930 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TOLLA-8L
AP320N04TLG5 substitution
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AP320N04TLG5 datasheet
ap320n04tlg5.pdf
AP320N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP320N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =320A DS D R ... See More ⇒
Detailed specifications: AP12N10Y , AP12P04S , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , AP30P10P , SI2302 , AP3400AI , AP3400BI , AP3400CI , AP3400DI , AP3400MI-L , AP3401AI , AP3401MI , AP3404BI .
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