AP90P01D Datasheet. Specs and Replacement

Type Designator: AP90P01D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.6 nS

Cossⓘ - Output Capacitance: 769 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO252

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AP90P01D datasheet

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AP90P01D

AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =12V I =90A DS D R ... See More ⇒

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AP90P01D

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Detailed specifications: AP3400MI-L, AP3401AI, AP3401MI, AP3404BI, AP3407AI, AP3407MI, AP3409MI, AP90N06F, IRFZ46N, AP90P03NF, AP9435A, AP9926A, AP9928A, AP9N20D, AP9N20P, AP9N20Y, AP9P20D

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