All MOSFET. AP90P01D Datasheet

 

AP90P01D Datasheet and Replacement


   Type Designator: AP90P01D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.6 nS
   Cossⓘ - Output Capacitance: 769 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO252
 

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AP90P01D Datasheet (PDF)

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AP90P01D

AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =12V I =90A DS DR

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AP90P01D

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AP90P01D

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AP90P01D

AP90P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP90P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-90A DS DR

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Datasheet: AP3400MI-L , AP3401AI , AP3401MI , AP3404BI , AP3407AI , AP3407MI , AP3409MI , AP90N06F , IRFZ46N , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D .

Keywords - AP90P01D MOSFET datasheet

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