AP90P01D Specs and Replacement
Type Designator: AP90P01D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.6 nS
Cossⓘ - Output Capacitance: 769 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
AP90P01D substitution
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AP90P01D datasheet
ap90p01d.pdf
AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =12V I =90A DS D R ... See More ⇒
Detailed specifications: AP3400MI-L , AP3401AI , AP3401MI , AP3404BI , AP3407AI , AP3407MI , AP3409MI , AP90N06F , IRFB31N20D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D .
Keywords - AP90P01D MOSFET specs
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