All MOSFET. APG110N10NF Datasheet

 

APG110N10NF Datasheet and Replacement


   Type Designator: APG110N10NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 645 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN5X6-8L
 

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APG110N10NF Datasheet (PDF)

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APG110N10NF

APG110N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG110N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =110A DS DR

Datasheet: AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D , APG100N10D , HY1906P , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , , , , .

History: APG120N10NF | FQPF16N25C | IRF9533 | APG130N06NF | FX6KMJ-06 | IXTH24N45MA | 2SK3850

Keywords - APG110N10NF MOSFET datasheet

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