APG110N10NF Datasheet. Specs and Replacement

Type Designator: APG110N10NF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 645 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN5X6-8L

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APG110N10NF datasheet

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APG110N10NF

APG110N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG110N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =110A DS D R ... See More ⇒

Detailed specifications: AP9435A, AP9926A, AP9928A, AP9N20D, AP9N20P, AP9N20Y, AP9P20D, APG100N10D, IRF520, APG120N10NF, APG120N12NF, APG130N06D, APG130N06NF, AP7P15D, AP7P15Y, AP80N02DF, AP80N02NF

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