APG110N10NF Datasheet and Replacement
Type Designator: APG110N10NF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 113.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 645 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: PDFN5X6-8L
APG110N10NF substitution
APG110N10NF Datasheet (PDF)
apg110n10nf.pdf
APG110N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG110N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =110A DS DR
Datasheet: AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D , APG100N10D , HY1906P , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AP7P15Y , AP80N02DF , AP80N02NF .
History: IXFX14N100 | IXFX15N100 | HYG035N10NS2P
Keywords - APG110N10NF MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IXFX14N100 | IXFX15N100 | HYG035N10NS2P
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