AP7P15D Datasheet. Specs and Replacement

Type Designator: AP7P15D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO252

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AP7P15D datasheet

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AP7P15D

AP7P15D -150V P-Channel Enhancement Mode MOSFET Description The AP7P15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS D R ... See More ⇒

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AP7P15D

AP7P15Y -150V P-Channel Enhancement Mode MOSFET Description The AP7P15Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS D R ... See More ⇒

Detailed specifications: AP9N20Y, AP9P20D, APG100N10D, APG110N10NF, APG120N10NF, APG120N12NF, APG130N06D, APG130N06NF, 75N75, AP7P15Y, AP80N02DF, AP80N02NF, AP80N03D, AP80N03DF, AP80N03NF, AP80N04D, AP80N04DF

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