AP7P15D Specs and Replacement
Type Designator: AP7P15D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO252
AP7P15D substitution
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AP7P15D datasheet
ap7p15d.pdf
AP7P15D -150V P-Channel Enhancement Mode MOSFET Description The AP7P15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS D R ... See More ⇒
ap7p15y.pdf
AP7P15Y -150V P-Channel Enhancement Mode MOSFET Description The AP7P15Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-7A DS D R ... See More ⇒
Detailed specifications: AP9N20Y , AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AOD4184A , AP7P15Y , AP80N02DF , AP80N02NF , AP80N03D , AP80N03DF , AP80N03NF , AP80N04D , AP80N04DF .
Keywords - AP7P15D MOSFET specs
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