AGM042N10A Datasheet and Replacement

AGM042N10AVDS ,Drain to Source Voltage (V) T , Junction Temperature () JFig.1 Typical Output CharacteristicsFig.2 Normalized RDSON vs. TJT , Junction Temperature () Qg , Gate Charge (nC) JFig.3 Normalized V vs. T Fig.4 Gate Charge Waveformth JI , Continuous Drain Current (A) V , Gate to Source Voltage (V) D GSFig.5 Turn-On Resistance vs. ID Fig.6 Turn-On Resistan

AGM042N10DSilicon N-Channel MOSFET Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71AGM042