AGM065N10C MOSFET Datasheet: N-Ch, 100V, 100A. Full specification with pinout and replacement list

AGM065N10C Specs and Replacement

   Type Designator: AGM065N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 31.1 nS
   Cossⓘ - Output Capacitance: 993 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO220

AGM065N10C substitution

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AGM065N10C datasheet

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AGM065N10C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VDS 90% 10% VGS Td(on) Tr Td(off) Tf Ton Toff Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform www.agm-mos.com 4 VER2.72 AGM065N10C MILLIMETER SYMBOL Dimensions TO-220 MIN Typ. MAX A A 4.370 4.570 4.700 E A1 A1 1.250 1.300 1.400 A2 2.150 2.350 2.550 b 0.700 0.800 0.950 b1 1.170 1.270 1.470 c 0.... See More ⇒

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AGM065N10D General Description The AGM065N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.8m 95A Advance high cell density Trench technology TO-252 Pin Configuration Low R to ... See More ⇒

Detailed specifications: AGM1099EY , AGM1099S , AGM10N15D , AGM042N10D , AGM056N08C , AGM056N10A , AGM056N10C , AGM056N10H , IRF4905 , AGM065N10D , AGM085N10C , AGM085N10C1 , AGM085N10F , AGM08T15C , AGM1010A2 , AGM1010A-E , AGM1010A-F .