AGM065N10D Datasheet. Specs and Replacement

Type Designator: AGM065N10D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 112 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31.1 nS

Cossⓘ - Output Capacitance: 1023 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm

Package: TO252

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AGM065N10D datasheet

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AGM065N10D

AGM065N10D General Description The AGM065N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.8m 95A Advance high cell density Trench technology TO-252 Pin Configuration Low R to ... See More ⇒

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AGM065N10D

AGM065N10C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VDS 90% 10% VGS Td(on) Tr Td(off) Tf Ton Toff Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform www.agm-mos.com 4 VER2.72 AGM065N10C MILLIMETER SYMBOL Dimensions TO-220 MIN Typ. MAX A A 4.370 4.570 4.700 E A1 A1 1.250 1.300 1.400 A2 2.150 2.350 2.550 b 0.700 0.800 0.950 b1 1.170 1.270 1.470 c 0.... See More ⇒

Detailed specifications: AGM1099S, AGM10N15D, AGM042N10D, AGM056N08C, AGM056N10A, AGM056N10C, AGM056N10H, AGM065N10C, 2SK3878, AGM085N10C, AGM085N10C1, AGM085N10F, AGM08T15C, AGM1010A2, AGM1010A-E, AGM1010A-F, AGM1030MA

Keywords - AGM065N10D MOSFET specs

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