All MOSFET. ZXMN0545G4 Datasheet

 

ZXMN0545G4 Datasheet and Replacement


   Type Designator: ZXMN0545G4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 0.14 A
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT223
 

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ZXMN0545G4 Datasheet (PDF)

 ..1. Size:213K  diodes
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ZXMN0545G4

ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

 0.1. Size:211K  zetex
 zxmn0545g4ta.pdf pdf_icon

ZXMN0545G4

ZXMN0545G4450V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mADESCRIPTIONThis 450V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

Datasheet: ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , ZVNL120G , AO3401 , ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G , ZXMN10A11K .

History: IRL530NL | BUK543-100B | AP60U02GH | IPU075N03LG

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