ZXMN0545G4 Datasheet. Specs and Replacement

Type Designator: ZXMN0545G4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.14 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: SOT223

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ZXMN0545G4 datasheet

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ZXMN0545G4

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ... See More ⇒

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 zxmn0545g4ta.pdf pdf_icon

ZXMN0545G4

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ... See More ⇒

Detailed specifications: ZXMN7A11K, BSS123Z, BSS123W, ZVN4424Z, ZVN4525E6, ZVN4525G, ZVN4525Z, ZVNL120G, 60N06, ZXMN10A07F, ZXMN10A07Z, ZXMN10A08DN8, ZXMN10A08E6, ZXMN10A08G, ZXMN10A09K, ZXMN10A11G, ZXMN10A11K

Keywords - ZXMN0545G4 MOSFET specs

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