MSQ100N03D Datasheet. Specs and Replacement

Type Designator: MSQ100N03D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.152 Ohm

Package: SOP8

  📄📄 Copy 

MSQ100N03D substitution

- MOSFET ⓘ Cross-Reference Search

 

MSQ100N03D datasheet

 ..1. Size:1030K  bruckewell
 msq100n03d.pdf pdf_icon

MSQ100N03D

MSQ100N03D Dual N-Channel 100-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the DS(ON) synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability ... See More ⇒

Detailed specifications: MSD60P16, MSH100N045SA, MSH30P100, MSH40N032, MSH60N35D, MSHM30N46, MSHM40N085, MSHM60P14, IRF9540N

Keywords - MSQ100N03D MOSFET specs

 MSQ100N03D cross reference

 MSQ100N03D equivalent finder

 MSQ100N03D pdf lookup

 MSQ100N03D substitution

 MSQ100N03D replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.