MSQ60P04D Datasheet. Specs and Replacement

Type Designator: MSQ60P04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 97.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOP8

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MSQ60P04D datasheet

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MSQ60P04D

MSQ60P04D P-Channel 60-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge. It s well suited for high DS(ON) efficiency fast switching applications. The device meets RoHS and Green Product requirement. Features R ... See More ⇒

Detailed specifications: MSHM30N46, MSHM40N085, MSHM60P14, MSQ100N03D, MSQ30P07D, MSQ30P15, MSQ30P40D, MSQ40P07D, 2SK3568

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