CS72N12 Datasheet. Specs and Replacement

Type Designator: CS72N12  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 95 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 118 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 502 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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CS72N12 datasheet

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CS72N12

CS72N12 N-Channel Trench Power MOSFET General Description The CS72N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features VDS=95V; ID=118A@ VGS=10V; RDS(ON)... See More ⇒

Detailed specifications: MSQ30P07D, MSQ30P15, MSQ30P40D, MSQ40P07D, MSQ60P04D, CS40N27, CS48N75A, CS55N50, IRLB4132

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