BC1012W Datasheet. Specs and Replacement

Type Designator: BC1012W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 9.68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOT323

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BC1012W datasheet

 ..1. Size:2006K  cn cbi
 bc1012w.pdf pdf_icon

BC1012W

Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV Drain Gate Gate Protection Source Diode EQUIVALENT CIRCUIT Maximum Ratings @T = 25 C unless otherwi... See More ⇒

 8.1. Size:1907K  cn cbi
 bc1012.pdf pdf_icon

BC1012W

Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV Marking Code NA1 Maximum Ratings @T = 25 C unless otherwise specified A Characteristic Symbol Valu... See More ⇒

 8.2. Size:1576K  cn cbi
 bc1012t.pdf pdf_icon

BC1012W

Plastic-Encapsulate MOSFETS N-CHANNEL ENHANCEMENT MODE MOSFET SOT 523 Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV 1. GATE 2. SOURCE 3. DRAIN Drain Marking Code NA1 Gate Gate Protection So... See More ⇒

Detailed specifications: CS75N45, CS85105A, CS95118, 2SK3018WT, 2SK3019W, 2SK3019WT, BC1012, BC1012T, 12N60

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