CB2301DW Datasheet. Specs and Replacement
Type Designator: CB2301DW 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT363
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CB2301DW datasheet
cb2301dw.pdf
SOT-36 3 Plastic-Encapsulate MOSFETS CB230 1D Dual P-CHANNEL MOSFET SOT-363 FEATURE 6 5 TrenchFET Power MOSFET 4 1 2 APPLICATIONS 3 z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MARKING 1DW 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Ga... See More ⇒
hscb2307.pdf
HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒
Detailed specifications: BC1012T, BC1012W, BC2301, BC3400, BC3401, BC3407, BC3415, BC8205, 5N60
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