CB3139KTB Datasheet. Specs and Replacement
Type Designator: CB3139KTB 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: SOT523
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CB3139KTB substitution
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CB3139KTB datasheet
cb3139ktb.pdf
Plastic-Encapsulate MOSFETS P-Channel MOSFET I V(BR)DSS RDS(on)MAX D SOT-523 m @-4.5V 950 -20V -0.66A m 1150 @-2.5V 3300m @-1.8V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low R (on) DS Battery Management for Ultra Smal... See More ⇒
Detailed specifications: BC1012W, BC2301, BC3400, BC3401, BC3407, BC3415, BC8205, CB2301DW, CS150N04A8
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