CEC2533 Datasheet. Specs and Replacement

Type Designator: CEC2533  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN3X3

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CEC2533 datasheet

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CEC2533

CEC2533 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 25V, 44A, RDS(ON) = 8 mW @VGS = 10V. RDS(ON) = 13 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). G High power and current handing capability. RoHS compliant. S D D D D G S S S DFN3*3 ABSOLUTE MAXIMUM RATINGS TC = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sour... See More ⇒

Detailed specifications: BC2301T-2.8A, BC2301W, BC2302-2.8A, BC2302T-2.8A, BC2302W, BC3134K, BC3134KT, CEB100N10L, 4N60

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