CEC3257 Datasheet. Specs and Replacement

Type Designator: CEC3257  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN3X3

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CEC3257 datasheet

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CEC3257

CEC3257 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES D -30V, -17A, RDS(ON) = 25mW @VGS = -10V. RDS(ON) = 32mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). G High power and current handing capability. RoHS compliant. S D2 D2 D1 D1 G2 S2 G1 S1 DFN3*3 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit ... See More ⇒

Detailed specifications: BC2301W, BC2302-2.8A, BC2302T-2.8A, BC2302W, BC3134K, BC3134KT, CEB100N10L, CEC2533, STP65NF06

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