CEZ2R05 Datasheet. Specs and Replacement

Type Designator: CEZ2R05  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: PAK5X6

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CEZ2R05 datasheet

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CEZ2R05

CEZ2R05 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 73A, RDS(ON) = 7m W @VGS = 10V. D D D D RDS(ON) = 11mW @VGS = 4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. 1 2 3 4 S S S G P-PAK 5X6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter... See More ⇒

Detailed specifications: CEM3115, CEM3133, CEM3139, CEM3425, CEP100N10L, CES2312A, CES2361, CEU3133, 60N06

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