CEZC2P07 Datasheet. Specs and Replacement

Type Designator: CEZC2P07  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: PAK3X3

  📄📄 Copy 

CEZC2P07 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEZC2P07 datasheet

 ..1. Size:969K  cet
 cezc2p07.pdf pdf_icon

CEZC2P07

CEZC2P07 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES D -20V, -40A, RDS(ON) = 9.5mW @VGS = -4.5V. RDS(ON) = 13mW @VGS = -2.5V. RDS(ON) = 20mW @VGS = -1.8V. G Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. S P-PAK 3X3 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter ... See More ⇒

Detailed specifications: CEM3133, CEM3139, CEM3425, CEP100N10L, CES2312A, CES2361, CEU3133, CEZ2R05, IRFZ46N

Keywords - CEZC2P07 MOSFET specs

 CEZC2P07 cross reference

 CEZC2P07 equivalent finder

 CEZC2P07 pdf lookup

 CEZC2P07 substitution

 CEZC2P07 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.