ZXMC6A09DN8 Datasheet. Specs and Replacement

Type Designator: ZXMC6A09DN8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SO8

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ZXMC6A09DN8 datasheet

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ZXMC6A09DN8

ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,... See More ⇒

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ZXMC6A09DN8

ZXMC6A09DN8T www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at ... See More ⇒

Detailed specifications: ZXMD63C03X, BSS8402DW, DMC4028SSD, DMC4040SSD, DMC4050SSD, ZXMC10A816N8, ZXMC4559DN8, ZXMC4A16DN8, 13N50, DMS2120LFWB, DMS2220LFDB, DMS2220LFW, 2SK311, 2SK3107C, 2SK3112, 2SK3114B, BSP75G

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