ZXMC6A09DN8 MOSFET Datasheet: NP-Ch, 60V, 5.1A. Full specification with pinout and replacement list

ZXMC6A09DN8 Specs and Replacement

   Type Designator: ZXMC6A09DN8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SO8

ZXMC6A09DN8 substitution

- MOSFET ⓘ Cross-Reference Search

ZXMC6A09DN8 datasheet

..1. Size:297K diodes
zxmc6a09dn8.pdf pdf_icon

ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,... See More ⇒

0.1. Size:911K cn vbsemi
zxmc6a09dn8t.pdf pdf_icon

ZXMC6A09DN8T www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at ... See More ⇒

Detailed specifications: ZXMD63C03X , BSS8402DW , DMC4028SSD , DMC4040SSD , DMC4050SSD , ZXMC10A816N8 , ZXMC4559DN8 , ZXMC4A16DN8 , IRFP260 , DMS2120LFWB , DMS2220LFDB , DMS2220LFW , 2SK311 , 2SK3107C , 2SK3112 , 2SK3114B , BSP75G .