ZXMHN6A07T8 PDF and Equivalents Search

 

ZXMHN6A07T8 Specs and Replacement


   Type Designator: ZXMHN6A07T8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A

Electrical Characteristics


   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SM8
 

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ZXMHN6A07T8 datasheet

 ..1. Size:180K  diodes
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ZXMHN6A07T8

ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES Compact package Low on... See More ⇒

Detailed specifications: ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , 18N50 , 2SK3115B , STU437S , STU435S , 2SJ652 , 2SJ656 , 2SK2394 , 2SK3557 , 2SK3666 .

Keywords - ZXMHN6A07T8 MOSFET specs

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