All MOSFET. ZXMHN6A07T8 Datasheet

 

ZXMHN6A07T8 Datasheet and Replacement


   Type Designator: ZXMHN6A07T8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Qg ⓘ - Total Gate Charge: 3.2 nC
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SM8
 

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ZXMHN6A07T8 Datasheet (PDF)

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ZXMHN6A07T8

ZXMHN6A07T860V N-CHANNEL MOSFET H-BRIDGESUMMARYV(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,power management applications.SM8FEATURES Compact package Low on

Datasheet: ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , 75N75 , 2SK3115B , STU437S , STU435S , 2SJ652 , 2SJ656 , 2SK2394 , 2SK3557 , 2SK3666 .

History: ZXMN3A01Z

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