ZXMHN6A07T8 Datasheet. Specs and Replacement

Type Designator: ZXMHN6A07T8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: SM8

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ZXMHN6A07T8 datasheet

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ZXMHN6A07T8

ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES Compact package Low on... See More ⇒

Detailed specifications: ZXMS6006SG, ZXMHC10A07N8, ZXMHC10A07T8, ZXMHC3A01N8, ZXMHC3A01T8, ZXMHC3F381N8, ZXMHC6A07N8, ZXMHC6A07T8, STP65NF06, 2SK3115B, STU437S, STU435S, 2SJ652, 2SJ656, 2SK2394, 2SK3557, 2SK3666

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.