ZXMHN6A07T8 Specs and Replacement
Type Designator: ZXMHN6A07T8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: SM8
ZXMHN6A07T8 substitution
ZXMHN6A07T8 datasheet
zxmhn6a07t8.pdf
ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES Compact package Low on... See More ⇒
Detailed specifications: ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , 18N50 , 2SK3115B , STU437S , STU435S , 2SJ652 , 2SJ656 , 2SK2394 , 2SK3557 , 2SK3666 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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