NTF5P03T3 Datasheet. Specs and Replacement

Type Designator: NTF5P03T3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 153 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT223

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NTF5P03T3 substitution

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NTF5P03T3 datasheet

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NTF5P03T3

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NTF5P03T3

NTF5P03T3G www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Loa... See More ⇒

 7.1. Size:103K  onsemi
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NTF5P03T3

NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P-Channel SOT-223 http //onsemi.com Features Ultra Low RDS(on) -5.2 AMPERES, -30 VOLTS Higher Efficiency Extending Battery Life RDS(on) = 100 mW Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified S AEC-Q101 Qualified and PPAP Capable - NVF5P03T3G These Devices are Pb-Free... See More ⇒

Detailed specifications: NTD6416AN, NTD6416ANL, NTD70N03R, NTE4151P, NTE4153N, NTF2955, NTF3055-100, NTF3055L108, IRF3205, NTF6P02, NTGD1100L, NTGD3148N, NTGD4161P, NTGD4167C, NTGS3130N, NTGS3136P, NTGS3433

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