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NTF5P03T3 Specs and Replacement


   Type Designator: NTF5P03T3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223
 

 NTF5P03T3 substitution

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NTF5P03T3 Specs

 0.1. Size:143K  onsemi
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NTF5P03T3

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 0.2. Size:849K  cn vbsemi
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NTF5P03T3

NTF5P03T3G www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Loa... See More ⇒

 7.1. Size:103K  onsemi
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NTF5P03T3

NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P-Channel SOT-223 http //onsemi.com Features Ultra Low RDS(on) -5.2 AMPERES, -30 VOLTS Higher Efficiency Extending Battery Life RDS(on) = 100 mW Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified S AEC-Q101 Qualified and PPAP Capable - NVF5P03T3G These Devices are Pb-Free... See More ⇒

Detailed specifications: NTD6416AN , NTD6416ANL , NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , IRFZ44N , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 .

Keywords - NTF5P03T3 MOSFET specs

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