All MOSFET. NTGD1100L Datasheet

 

NTGD1100L Datasheet and Replacement


   Type Designator: NTGD1100L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP6
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NTGD1100L Datasheet (PDF)

 ..1. Size:110K  onsemi
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NTGD1100L

NTGD1100LPower MOSFET8 V, 3.3 A, Load Switch with Level-Shift,P-Channel, TSOP-6The NTGD1100L integrates a P and N-Channel MOSFET in asingle package. This device is particularly suited for portableelectronic equipment where low control signals, low battery voltageshttp://onsemi.comand high load currents are needed. The P-Channel device isspecifically designed as a load switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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