NTGD1100L MOSFET. Datasheet pdf. Equivalent
Type Designator: NTGD1100L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.83 W
Maximum Drain-Source Voltage |Vds|: 8 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 3.3 A
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TSOP6
NTGD1100L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTGD1100L Datasheet (PDF)
1.1. ntgd1100l.pdf 
Size:110K _onsemi
NTGD1100L Power MOSFET 8 V, 3.3 A, Load Switch with Level-Shift, P-Channel, TSOP-6 The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages http://onsemi.com and high load currents are needed. The P-Channel device is specifically designed as a load switch usi
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
