All MOSFET. NTGD1100L Datasheet

 

NTGD1100L Datasheet and Replacement


   Type Designator: NTGD1100L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP6

 NTGD1100L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTGD1100L Datasheet (PDF)

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NTGD1100L

NTGD1100LPower MOSFET8 V, 3.3 A, Load Switch with Level-Shift,P-Channel, TSOP-6The NTGD1100L integrates a P and N-Channel MOSFET in asingle package. This device is particularly suited for portableelectronic equipment where low control signals, low battery voltageshttp://onsemi.comand high load currents are needed. The P-Channel device isspecifically designed as a load switch

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

History: IRF540FI

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