NTGD1100L Datasheet and Replacement
Type Designator: NTGD1100L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSOP6
NTGD1100L substitution
NTGD1100L Datasheet (PDF)
ntgd1100l.pdf

NTGD1100LPower MOSFET8 V, 3.3 A, Load Switch with Level-Shift,P-Channel, TSOP-6The NTGD1100L integrates a P and N-Channel MOSFET in asingle package. This device is particularly suited for portableelectronic equipment where low control signals, low battery voltageshttp://onsemi.comand high load currents are needed. The P-Channel device isspecifically designed as a load switch
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
History: FDMS6681Z
Keywords - NTGD1100L MOSFET datasheet
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History: FDMS6681Z



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