NTGD1100L Datasheet. Specs and Replacement

Type Designator: NTGD1100L  📄📄 

Marking Code: TZ*

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP6

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NTGD1100L datasheet

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NTGD1100L

NTGD1100L Power MOSFET 8 V, 3.3 A, Load Switch with Level-Shift, P-Channel, TSOP-6 The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages http //onsemi.com and high load currents are needed. The P-Channel device is specifically designed as a load switch... See More ⇒

Detailed specifications: NTD70N03R, NTE4151P, NTE4153N, NTF2955, NTF3055-100, NTF3055L108, NTF5P03T3, NTF6P02, IRF840, NTGD3148N, NTGD4161P, NTGD4167C, NTGS3130N, NTGS3136P, NTGS3433, NTGS3441, NTGS3443

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