All MOSFET. NTGD1100L Datasheet


NTGD1100L MOSFET. Datasheet pdf. Equivalent

Type Designator: NTGD1100L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.83 W

Maximum Drain-Source Voltage |Vds|: 8 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 3.3 A

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TSOP6

NTGD1100L Transistor Equivalent Substitute - MOSFET Cross-Reference Search


NTGD1100L Datasheet (PDF)

1.1. ntgd1100l.pdf Size:110K _onsemi


NTGD1100L Power MOSFET 8 V, 3.3 A, Load Switch with Level-Shift, P-Channel, TSOP-6 The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch usi

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