FMM110-015X2F MOSFET. Datasheet pdf. Equivalent
Type Designator: FMM110-015X2F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Drain Current |Id|: 53 A
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 18 nS
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: ISOPLUSI4
FMM110-015X2F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMM110-015X2F Datasheet (PDF)
..1. fmm110-015x2f.pdf 
Size:176K _ixys
Advance Technical InformationTrenchT2TM HiperFET VDSS = 150VFMM110-015X2FN-Channel Power ID25 = 53A MOSFET RDS(on) 20m 33T1trr(typ) = 85ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOLD 50/60HZ, RMS, t
Datasheet: FMD15-06KC5 , FDMS8672S , FMD21-05QC , FMD40-06KC , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , 2N7000 , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P .
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