GWM100-0085X1-SMD MOSFET. Datasheet pdf. Equivalent
Type Designator: GWM100-0085X1-SMD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 103 A
Qgⓘ - Total Gate Charge: 114 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: ISOPLUSDIL
GWM100-0085X1-SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GWM100-0085X1-SMD Datasheet (PDF)
gwm100-0085x1-smd.pdf
GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering
gwm100-0085x1-sl.pdf
GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering
gwm100-01x1-smd.pdf
GWM 100-01X1VDSS = 100 VThree phase full BridgeID25 = 90 Awith Trench MOSFETsRDSon typ. = 7.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 100 V - electric power steering
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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