GWM120-0075X1-SMD MOSFET. Datasheet pdf. Equivalent
Type Designator: GWM120-0075X1-SMD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 100 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
Package: ISOPLUSDIL
GWM120-0075X1-SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GWM120-0075X1-SMD Datasheet (PDF)
gwm120-0075x1-smd.pdf
GWM 120-0075X1VDSS = 75 VThree phase full BridgeID25 = 110 Awith Trench MOSFETsRDSon typ. = 4.0 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steerin
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918