All MOSFET. GWM160-0055X1-SL Datasheet

 

GWM160-0055X1-SL Datasheet and Replacement


   Type Designator: GWM160-0055X1-SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   trⓘ - Rise Time: 120 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: ISOPLUSDIL
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GWM160-0055X1-SL Datasheet (PDF)

 0.1. Size:291K  ixys
 gwm160-0055x1-smd.pdf pdf_icon

GWM160-0055X1-SL

GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CTZ2302A | STI42N65M5 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - GWM160-0055X1-SL MOSFET datasheet

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