GWM160-0055X1-SL Datasheet. Specs and Replacement

Type Designator: GWM160-0055X1-SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Id| ⓘ - Maximum Drain Current: 150 A

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: ISOPLUSDIL

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GWM160-0055X1-SL datasheet

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GWM160-0055X1-SL

GWM 160-0055X1 VDSS = 55 V Three phase full Bridge ID25 = 150 A with Trench MOSFETs RDSon typ. = 2.7 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 55 V - electric power steering... See More ⇒

Detailed specifications: GWM100-01X1-SL, FDMS3604S, GWM100-01X1-SMD, FDMS3602AS, GWM120-0075X1-SL, FDMS3600AS, GWM120-0075X1-SMD, FDMS0310S, TK10A60D, FDMS0302S, GWM160-0055X1-SMD, FCP190N65F, GWM180-004X2-SL, FCH043N60, GWM180-004X2-SMD, FDB86360F085, IXFA102N15T

Keywords - GWM160-0055X1-SL MOSFET specs

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