GWM160-0055X1-SL Spec and Replacement
Type Designator: GWM160-0055X1-SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 150 A
tr ⓘ - Rise Time: 120 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: ISOPLUSDIL
GWM160-0055X1-SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GWM160-0055X1-SL Specs
gwm160-0055x1-smd.pdf
GWM 160-0055X1 VDSS = 55 V Three phase full Bridge ID25 = 150 A with Trench MOSFETs RDSon typ. = 2.7 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 55 V - electric power steering... See More ⇒
Detailed specifications: GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , 5N60 , FDMS0302S , GWM160-0055X1-SMD , FCP190N65F , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360F085 , IXFA102N15T .
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