GWM160-0055X1-SL MOSFET. Datasheet pdf. Equivalent
Type Designator: GWM160-0055X1-SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id|ⓘ - Maximum Drain Current: 150 A
trⓘ - Rise Time: 120 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: ISOPLUSDIL
GWM160-0055X1-SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GWM160-0055X1-SL Datasheet (PDF)
gwm160-0055x1-smd.pdf
GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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