All MOSFET. GWM160-0055X1-SMD Datasheet

 

GWM160-0055X1-SMD Datasheet and Replacement


   Type Designator: GWM160-0055X1-SMD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Qg ⓘ - Total Gate Charge: 105 nC
   tr ⓘ - Rise Time: 120 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: ISOPLUSDIL
 
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GWM160-0055X1-SMD Datasheet (PDF)

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GWM160-0055X1-SMD

GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering

Datasheet: GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , IRFZ46N , FCP190N65F , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360F085 , IXFA102N15T , IXFA10N60P , IXFA10N80P .

History: CEB21A2 | IRF9130SMD05

Keywords - GWM160-0055X1-SMD MOSFET datasheet

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