GWM160-0055X1-SMD Datasheet. Specs and Replacement
Type Designator: GWM160-0055X1-SMD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 150 A
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
Qg ⓘ - Total Gate Charge: 105 nC
tr ⓘ - Rise Time: 120 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: ISOPLUSDIL
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GWM160-0055X1-SMD substitution
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GWM160-0055X1-SMD datasheet
gwm160-0055x1-smd.pdf
GWM 160-0055X1 VDSS = 55 V Three phase full Bridge ID25 = 150 A with Trench MOSFETs RDSon typ. = 2.7 mW in DCB isolated high current package L+ G3 G5 G1 S3 S5 S1 L1 L2 L3 Straight leads Surface Mount Device G4 G6 G2 S4 S6 S2 L- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles VDSS TJ = 25 C to 150 C 55 V - electric power steering... See More ⇒
Detailed specifications: GWM100-01X1-SMD, FDMS3602AS, GWM120-0075X1-SL, FDMS3600AS, GWM120-0075X1-SMD, FDMS0310S, GWM160-0055X1-SL, FDMS0302S, STF13NM60N, FCP190N65F, GWM180-004X2-SL, FCH043N60, GWM180-004X2-SMD, FDB86360F085, IXFA102N15T, IXFA10N60P, IXFA10N80P
Keywords - GWM160-0055X1-SMD MOSFET specs
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