GWM160-0055X1-SMD MOSFET. Datasheet pdf. Equivalent
Type Designator: GWM160-0055X1-SMD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 150 A
Qgⓘ - Total Gate Charge: 105 nC
trⓘ - Rise Time: 120 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: ISOPLUSDIL
GWM160-0055X1-SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GWM160-0055X1-SMD Datasheet (PDF)
gwm160-0055x1-smd.pdf
GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering
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