All MOSFET. GWM160-0055X1-SMD Datasheet

 

GWM160-0055X1-SMD Datasheet and Replacement


   Type Designator: GWM160-0055X1-SMD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   trⓘ - Rise Time: 120 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: ISOPLUSDIL
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GWM160-0055X1-SMD Datasheet (PDF)

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GWM160-0055X1-SMD

GWM 160-0055X1VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.7 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 55 V - electric power steering

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIR826DP | TSM4424CS | LKK47-06C5 | ELM34423AA | ZXMN3B04N8TA | BRCS200P03DP | IRFB3004GPBF

Keywords - GWM160-0055X1-SMD MOSFET datasheet

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