IXFB100N50P Spec and Replacement
Type Designator: IXFB100N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 100 A
Qg ⓘ - Total Gate Charge: 240 nC
tr ⓘ - Rise Time: 200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: PLUS264
IXFB100N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFB100N50P Specs
ixfb100n50p.pdf
IXFB 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30... See More ⇒
ixfb150n65x2.pdf
Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFB150N65X2 Power MOSFET ID25 = 150A RDS(on) 17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S Tab VGSS Continuous 30... See More ⇒
Detailed specifications: IXFA3N80 , IXFA4N100P , IXFA4N100Q , IXFA5N100P , IXFA6N120P , IXFA76N15T2 , IXFA7N100P , IXFA7N80P , MMIS60R580P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 , IXFB170N30P , IXFB210N20P , IXFB300N10P , IXFB30N120P .
Keywords - IXFB100N50P MOSFET specs
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