All MOSFET. IXFB100N50P Datasheet

 

IXFB100N50P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFB100N50P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1250 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 100 A

Total Gate Charge (Qg): 240 nC

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.049 Ohm

Package: PLUS264

IXFB100N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFB100N50P Datasheet (PDF)

1.1. ixfb100n50p.pdf Size:173K _ixys

IXFB100N50P
IXFB100N50P

IXFB 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 49 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V (TAB) G VGSM Transient 40 V D S

5.1. ixfb150n65x2.pdf Size:109K _ixys

IXFB100N50P
IXFB100N50P

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFB150N65X2 Power MOSFET ID25 = 150A   RDS(on)  17m       N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G D VDGR TJ = 25C to 150C, RGS = 1M 650 V S Tab VGSS Continuous  30

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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