All MOSFET. IXFK120N20P Datasheet

 

IXFK120N20P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFK120N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 714 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 152 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO264

 IXFK120N20P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK120N20P Datasheet (PDF)

 4.1. Size:395K  ixys
 ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf

IXFK120N20P IXFK120N20P

This datasheet has been downloaded from http://www.digchip.com at this page

 4.2. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf

IXFK120N20P IXFK120N20P

HiPerFETTM IXFX 120N20 VDSS = 200 VIXFK 120N20 ID25 = 120 APower MOSFETsRDS(on) = 17 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V (TAB)GVGSM Transient 30 VDI

 5.1. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf

IXFK120N20P IXFK120N20P

VDSS = 250 VIXFK 120N25PPolarHTTM HiPerFETID25 = 120 AIXFX 120N25PPower MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 250 VTO-264 (IXFK)VDGR TJ = 25C to 175C; RGS = 1 M 250 VVGS Continuous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFPC60

 

 
Back to Top