All MOSFET. 3N191 Datasheet

 

3N191 Datasheet and Replacement


   Type Designator: 3N191
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6.5 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: TO99
 

 3N191 substitution

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3N191 Datasheet (PDF)

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3N191

Dual P-ChannelEnhancement Mode MOSFETCORPORATIONGeneral Purpose Amplifier3N190 / 3N191FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) Very High Input Impedance High Gate Breakdown 3N190-3N191 Drain-Source or Drain-Gate Voltage (Note 1) Low Capacitance 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Datasheet: 3N169 , 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , K4145 , 3N200 , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 .

History: HAT1128R | BLF6G27-10G | FDPF12N50T | TPC6011 | RJK5026DPP-M0 | DH100P25 | FQN1N50C

Keywords - 3N191 MOSFET datasheet

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