3N200 Datasheet and Replacement
Type Designator: 3N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO72
3N200 substitution
3N200 Datasheet (PDF)
ixth3n200p3hv ixtt3n200p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG
Datasheet: 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , IRF9540N , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , 3N209 .
History: AM3474N
Keywords - 3N200 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: AM3474N
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