3N200 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.33 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 6 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 175 °C
Drain-Source Capacitance (Cd): 2 pF
Maximum Drain-Source On-State Resistance (Rds): 100 Ohm
Package: TO72
3N200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N200 Datasheet (PDF)
0.1. ixth3n200p3hv ixtt3n200p3hv.pdf 
Size:201K _ixys
Advance Technical Information High Voltage VDSS = 2000V IXTT3N200P3HV Power MOSFET ID25 = 3A IXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000 V VDGR TJ = 25C to 150C, RGS = 1M 2000 V VGSS Continuous 20 V VG
0.2. 3n200.pdf Size:383K _no
Datasheet: 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , IRFZ48N , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , 3N209 .
