All MOSFET. 3N200 Datasheet

 

3N200 Datasheet and Replacement


   Type Designator: 3N200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO72
 

 3N200 substitution

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3N200 Datasheet (PDF)

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3N200

 0.1. Size:201K  ixys
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3N200

Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG

Datasheet: 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , IRF1010E , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , 3N209 .

Keywords - 3N200 MOSFET datasheet

 3N200 cross reference
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