3N200 PDF Specs and Replacement
Type Designator: 3N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO72
3N200 substitution
3N200 PDF Specs
ixth3n200p3hv ixtt3n200p3hv.pdf
Advance Technical Information High Voltage VDSS = 2000V IXTT3N200P3HV Power MOSFET ID25 = 3A IXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M 2000 V VGSS Continuous 20 V VG... See More ⇒
Detailed specifications: 3N170 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , IRF9540N , 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , 3N209 .
History: 2SK3580-01MR | NTF2955PT1G | FXN10N80F | NTF3055L108T1G | NTDV20P06L | 3N325A
Keywords - 3N200 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK3580-01MR | NTF2955PT1G | FXN10N80F | NTF3055L108T1G | NTDV20P06L | 3N325A
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