3N200 Datasheet. Specs and Replacement

Type Designator: 3N200  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm

Package: TO72

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3N200 datasheet

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3N200

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3N200

Advance Technical Information High Voltage VDSS = 2000V IXTT3N200P3HV Power MOSFET ID25 = 3A IXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M 2000 V VGSS Continuous 20 V VG... See More ⇒

Detailed specifications: 3N170, 3N171, 3N175, 3N176, 3N177, 3N187, 3N190, 3N191, IRF1010E, 3N201, 3N202, 3N203, 3N203A, 3N204, 3N205, 3N206, 3N209

Keywords - 3N200 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs