IXFL36N110P MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFL36N110P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Qgⓘ - Total Gate Charge: 350 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: ISOPLUS264

IXFL36N110P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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