IXFL40N110P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFL40N110P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 357 W
Maximum Drain-Source Voltage |Vds|: 1100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 6.5 V
Maximum Drain Current |Id|: 21 A
Total Gate Charge (Qg): 310 nC
Rise Time (tr): 300 nS
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: ISOPLUS264
IXFL40N110P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFL40N110P Datasheet (PDF)
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