3N210 Spec and Replacement
Type Designator: 3N210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: MACROH
3N210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3N210 Specs
3n210 3n209.pdf
3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as HR (high reliability) screened per MIL-PRF-19500, JANTX level. Add HR suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding -PBF suffix. MAXIMUM RATINGS Rating Symbol Value Unit Dra... See More ⇒
Detailed specifications: 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , 3N209 , K4145 , 3N211 , 3N212 , 3N213 , 3N242 , 3N323 , 3N324 , 3N325 , 3N325A .
History: IPP60R190P6 | AP02N90JB
Keywords - 3N210 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPP60R190P6 | AP02N90JB
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