3N210 Datasheet and Replacement
Type Designator: 3N210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: MACROH
3N210 substitution
3N210 Datasheet (PDF)
3n210 3n209.pdf
3N209-3N210DUAL GATE MOSFET VHF AMPLIFIERHigh-reliability discrete productsand engineering services since 1977FEATURES Available as HR (high reliability) screened per MIL-PRF-19500, JANTX level. Add HR suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding -PBF suffix.MAXIMUM RATINGSRating Symbol Value UnitDra
Datasheet: 3N201 , 3N202 , 3N203 , 3N203A , 3N204 , 3N205 , 3N206 , 3N209 , IRFB3607 , 3N211 , 3N212 , 3N213 , 3N242 , 3N323 , 3N324 , 3N325 , 3N325A .
History: FXN10N06D
Keywords - 3N210 MOSFET datasheet
3N210 cross reference
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History: FXN10N06D
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