IXFP4N100QM PDF Specs and Replacement
Type Designator: IXFP4N100QM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220
IXFP4N100QM substitution
IXFP4N100QM PDF Specs
ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RG... See More ⇒
Detailed specifications: IXFP22N60P3 , IXFP230N075T2 , IXFP3N120 , IXFP3N50PM , IXFP3N80 , IXFP4N100P , IXFP4N100PM , IXFP4N100Q , TK10A60D , IXFP5N100P , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IXFP7N100P , IXFP7N80P , IXFP7N80PM , IXFP8N50PM .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
