All MOSFET. IXFP4N100QM Datasheet

 

IXFP4N100QM Datasheet and Replacement


   Type Designator: IXFP4N100QM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Qgⓘ - Total Gate Charge: 43.5 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220
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IXFP4N100QM Datasheet (PDF)

 8.1. Size:163K  ixys
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IXFP4N100QM

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFY4N60P3Power MOSFETs ID25 = 4AIXFA4N60P3 RDS(on) 2.2 IXFP4N60P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, RG

Datasheet: IXFP22N60P3 , IXFP230N075T2 , IXFP3N120 , IXFP3N50PM , IXFP3N80 , IXFP4N100P , IXFP4N100PM , IXFP4N100Q , 4435 , IXFP5N100P , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IXFP7N100P , IXFP7N80P , IXFP7N80PM , IXFP8N50PM .

History: APT4016SVFRG | ZXMC3A18DN8 | AP50T10GJ-HF

Keywords - IXFP4N100QM MOSFET datasheet

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