IXFP6N120P Datasheet. Specs and Replacement

Type Designator: IXFP6N120P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.75 Ohm

Package: TO220

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IXFP6N120P datasheet

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IXFP6N120P

X3-Class HiPerFETTM VDSS = 250V IXFA60N25X3 Power MOSFET ID25 = 60A IXFP60N25X3 RDS(on) 23m IXFQ60N25X3 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 250 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 250 V VGSS Co... See More ⇒

Detailed specifications: IXFP3N50PM, IXFP3N80, IXFP4N100P, IXFP4N100PM, IXFP4N100Q, IXFP4N100QM, IXFP5N100P, IXFP5N50PM, IRFP250, IXFP76N15T2, IXFP7N100P, IXFP7N80P, IXFP7N80PM, IXFP8N50PM, IXFQ10N80P, IXFQ12N80P, IXFQ14N80P

Keywords - IXFP6N120P MOSFET specs

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