2N6770JANTXV MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6770JANTXV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 190 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO204
2N6770JANTXV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6770JANTXV Datasheet (PDF)
2n6770 irf450.pdf
PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS
2n6764 2n6766 2n6768 2n6770.pdf
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION
Datasheet: 2N6768JAN , 2N6768JANTX , 2N6768JANTXV , 2N6768JTX , 2N6768JTXV , 2N6769 , 2N6770 , 2N6770JANTX , SKD502T , 2N6770JTX , 2N6770JTXV , 2N6781 , 2N6781LCC4 , 2N6781-SM , 2N6782 , 2N6782JANTX , 2N6782JANTXV .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918