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D7N607A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 7.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=1.02 Features Fast switching ESD improved capability Low on resistance(Rdson1.25) Low gate charge(Typ: 24nC) Low reverse transfer capacitances(Typ: 5.5pF) 100% single pulse avalanche energy test 100% VDS test3 Applications Used in various power switching circuit for systemTO-252Bminiaturization and higher efficiency. Power switch circuit of electron ballast and adaptor.4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)PARAMETER SYMBOL VALUE