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DH009N02/DH009N02F/DH009N02IDH009N02E/DH009N02B/DH009N02D310A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.35mDS(on) (TYP)standard.13 SI = 310AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDSTO-220C TO-220F TO-2623 Applications Power switching applications Inverter management system Electric tools Automotive electronicsTO-263 TO-252B TO-251B4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)RatingParameter Symbol UnitsDH009N02I DH009N02B DH009DH009N02DH