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FJD3076Power Amplifier Applications Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 VIC Collector Current 2 A PC Collector Dissipation (Ta=25C) 1 W Collector Dissipation (TC=25C) 10 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 32 V BVCBO Collector-Base Breakdown Voltage IC = 50A40 V BVEBO Emitter-Base Breakdown Voltage IE = 50A5 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 1 A IEBO Emitt

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 fjd3076.pdf Проектирование, MOSFET, Мощность

 fjd3076.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fjd3076.pdf База данных, Инновации, ИМС, Транзисторы