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Si6459BDQVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.115 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 600.150 at VGS = - 4.5 V - 2.4 Compliant to RoHS Directive 2002/95/ECS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6459BDQS S3 6G D4 5DTop ViewP-Channel MOSFETOrdering Information: Si6459BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol 10 s Steady State Unit VDSDrain-Source Voltage - 60VVGSGate-Source Voltage 20TA = 25 C- 2.7 - 2.2IDContinuous Drain Current (TJ = 150 C)aTA = 70 C- 2.2 - 1.8IDMPulsed Drain Current (10 s Pulse Width) - 20 AIS- 1.25 - 0.83Continuo

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 si6459bdq.pdf Проектирование, MOSFET, Мощность

 si6459bdq.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 si6459bdq.pdf База данных, Инновации, ИМС, Транзисторы